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We have investigated transient enhanced diffusion of phosphorus in silicon following implantation with silicon or argon ions at low doses. Both conditions show uphill diffusion of phosphorus due to the defect gradients, but the resulting profiles are quite different because of differences in the initial defect distributions. These experiments support an interstitial pair diffusion mechanism for phosphorus and show the importance of bulk recombination in determining defect distributions for argon damage annealing

Transient phosphorus diffusion from silicon and argon implantation damage