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The dielectric function of a thick layer of In0.52Al0.48As lattice matched to InP was measured by variable angle spectroscopic ellipsometry in the range 1.9–4.1 eV. The In0.52Al0.48As was protected from oxidation using a thin In0.53Ga0.47As cap that was mathematically removed for the dielectric function estimate. The In0.52Al0.48As dielectric function was then verified by ellipsometric measurements of other In0.53Ga0.47As/In0.52Al0.48As structures, including modulation doped field effect transistors (MODFET), and is shown to provide accurate structure layer thicknesses

Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates