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A formalism is presented to study interband tunneling which involves a direct, numerical solution of the time‐dependent Schrödinger equation, employing the tight‐binding representation for electronic states with an eight‐element (sp3) basis. Using this explicitly time‐dependent formalism, one can study the dynamics of interband tunneling in the presence of complicated space‐ and time‐dependent electric field profiles encountered in many devices. This technique is well suited to study interband tunneling in heterostructures since the tight‐binding method describes their band structure adequately. In conjunction with deformation potential theory, it can be applied to strained systems as well. The technique is applied to the important semiconductor system of InxGa1−xAs

Time-dependent formalism for interband tunneling application to the InxGa1−xAs system