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A novel electro‐optical phase modulator working at 1.55 μm is analyzed and proposed. It is shown by a numerical model that in a GaInAs/InP pn‐nin‐pn multiple‐quantum‐well waveguide structure, large optical phase modulation can be obtained at small intensity modulation and with improved performance compared to what is achieved in quantum confined Stark effect modulators of the same material system. The device proposed is based on a modulation of the quasi‐Fermi energies of the electrons in the GaInAs quantum wells. This operational principle allows GHz modulation frequencies.

Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures