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We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high‐resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye‐laser pulses and produces interferograms with exceptional signal‐to‐noise ratios.

THz spectroscopy and source characterization by optoelectronic interferometry