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Aluminum oxide thin films were prepared by a low‐temperature atmospheric‐pressure chemical vapor deposition method. The raw material was aluminum 2‐ethylhexanoate, which is nontoxic and easy to handle. At a reaction temperature above 480 °C, an amorphous film can be obtained on glass and silicon (100) substrates. The reaction temperature and the deposition rate are comparable to the corresponding values in the low‐temperature chemical vapor depositions of Al2O3. In addition, the deposition can be carried out in air. Aluminum 2‐ethylhexanoate appears to offer a viable alternative to alkylaluminum, aluminum β‐diketonate, and alkoxide for low‐temperature Al2O3 production.

Aluminum oxide thin films prepared by chemical vapor deposition from aluminum 2-ethylhexanoate