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By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba2Cu3O7−x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al2O3‐GaAs and the Al2O3‐Y1Ba2Cu3O7−x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730 °C

Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al2O3 or AlGaO3 buffer layer