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The biaxial strain produced in lattice‐mismatched epitaxy can have a substantial effect on the valence band structure. Theoretical results are presented for a hydrogenic acceptor in a quantum well under tensile and compressive strain. The acceptor level energy is a strong function of strain and could be used as a signature for the effect of strain on the valence band structure. Experimental studies are carried out on compressively strained InyGa1−yAs/ AlxGa1−xAs quantum well structures and the acceptor level energy is determined by photoluminescence measurements. Good agreement is found with the experiments

Effect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structures