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Reflection high‐energy electron diffraction oscillations have been studied during the growth of strained InxGa1−xAs on GaAs by molecular beam epitaxy and migration‐enhanced epitaxy. The oscillations decay rapidly for x≳0.2 during molecular beam epitaxy, while they persist for a long while during migration‐enhanced epitaxy. We believe that the altered surface reconstruction pattern in the latter case changes the growth mode from three‐dimensional to a near perfect two‐dimensional mode for high strain values. Using migration‐enhanced epitaxy, we demonstrate improved channel mobility and performance of GaAs‐based modulation‐doped field‐effect transistors and narrower linewidths in the low‐temperature excitonic photoluminescence of In0.1Ga0.9As/Al0.3Ga0.7As quantum wells

Reflection high-energy electron diffraction studies of the growth of strained InxGa1−xAs on GaAs substrate by migration-enhanced epitaxy