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We have investigated the characteristics of molecular beam epitaxial In0.53 (Gax Al1−x )0.47 As/InP waveguides and phase modulators in the 1.15–1.3 μm wavelength range. Loss at 1.15 μm has been measured and is ∼5 dB/cm. The measured phase shift due to the electro‐optic effect results in an electro‐optic coefficient r63 ∼0.6×10−12 m/V. Preliminary results at 1.3 μm show that the loss is reduced and is ∼3.4 dB/cm

Single mode optical waveguides and phase shifters using InGaAlAs on InP grown by molecular beam epitaxy