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EUV lithography is planned to address the 22nm node and beyond. Resolution limit for chemical amplified resists is one of the major issues for EUV lithography development. Currently, exposure studies concerning limit of resolution in resists are done in interferometer tools using synchrotron radiation light or EUV scanners. In the framework of a stand alone EUV interferometer development, due to the low power of EUV sources, we have studied and developed new gratings with high efficiency. In this work, we developed gratings for EUV applications with a theoretical efficiency of 28% compared to gratings currently used in EUV interferometer (7% efficiency). Manufacturing process to realize 100nm thick silicon membranes and gratings etched in molybdenum layer were developed. This high efficiency is a necessary step to build a successful standalone EUV interferometer. Membranes and gratings characteristics will be described. Exposure tests have been performed using synchrotron radiation. Results obtain with first and second order diffraction will be presented.

Results obtained with high efficiency gratings for EUV application