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We describe a novel GaAs/AlGaAs double-quantum-well device for the infraredphoton detection, called Charge-Sensitive Infrared Phototransistor (CSIP). Theprinciple of CSIP detector is the photo-excitation of an intersubbandtransition in a QW as an charge integrating gate and the signal amplificationby another QW as a channel with very high gain, which provides us withextremely high responsivity (10^4 -- 10^6 A/W). It has been demonstrated thatthe CSIP designed for the mid-infrared wavelength (14.7 um) has an excellentsensitivity; the noise equivalent power (NEP) of 7x10^-19 W/rHz with thequantum efficiency of ~2%. Advantages of the CSIP against the other highlysensitive detectors are, huge dynamic range of >10^6, low output impedance of10^3 -- 10^4 Ohms, and relatively high operation temperature (>2K). We discusspossible applications of the CSIP to FIR photon detection covering 35 -- 60 umwaveband, which is a gap uncovered with presently available photoconductors.

CSIP - a Novel Photon-Counting Detector Applicable for the SPICA Far-Infrared Instrument