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The main properties of metal-oxide-s ilicon radiation dosemeters are described and the results obtained in terms of sensitivity and stability with thick oxide layers are given. Possible methods for improving their sensitivity are briefly dis­ cussed. RESUME Les principales proprietes des dosimetres de rayonnement metal-oxyde-semi­ conducteur (MOS) sont decrites. Nous presentons les resultats obtenus pour la sensibilite et la stabilite des dosimetres a oxyde de grille epais qui montrent que ce composant a des applications en dosimetric des personnels et en medecine. Nous discuterons brievement les ameliorations possibles de la sensibilite.

Thick oxide MOS transistors for ionizing radiation dose measurement