English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm 2  while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology