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The mixture between the difference semiconductor quantum dot sensitizer which is cadmium selenide(CdSe) and zinc sulfide (ZnS) into the Dye-synthesis solar cell (DSSCs) can affect the value of resistance and capacity photoanode in the system.In this experiment, each sample consists difference weight percent of Zinc sulfide and the constant weight percent of CdSe. Docter blade technique is used to stick and spread evenly the mixture CdSe/ZnS QD on the surface of the thin film. To prove the assembled of CdSe/ZnS on the thin film were observed using Scanning Electron Microscopy (SEM). The resistance and capacity of the photoanode were characterized by using impedance spectroscopy(EIS). The smallest resistance is 37.1kΩ produce by CdSe/ZnS(20 wt%) and the largest resistance 825KΩ produce by CdSe/ZnS(50 wt%) while the highest capacity is 12 µF in the CdSe/ZnS(40 wt%) and the lowest capacity is CdSe/ZnS(20 wt%) which is 538 nF. The most suitable composition to be used as photoanode is CdSe/ZnS(40 wt%) because it has high capacity and low resistance.

Quantum dot solar cell studies on the influence of Cadmium Selenide(CdSe)QDs and the Zinc Sulfide(ZnS)QDs in the photoanode