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Non-oriented and grain-oriented 6.5% Si-Fe laminations have been prepared by means of the dynamic Chemical Vapour Deposition technique, exploiting a chemical reaction at 1000°C between a flowing SiCl4 + Ar mixture and an iron-silicon based substrate. The siliconizing process leads, from the first moments, to an epitaxial growth of Fe3Si, then to an underlayer solid solution by intermetallic diffusion. The optimum treatment has been chosen as 60 minutes at 1000°C, followed by 13 hour annealing in vacuum at the same temperature, which permits one to achieve the desired uniform concentration of Si around 6.5 wt %. NO and GO treated samples have been rnagnetically characterized in the frequency range 0.5 Hz - 1 kHz. A decrease between 15% and 50% of the energy loss has been observed in the CVD laminations

Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl4

Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl₄