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At relatively high temperature (T>1020 K = 0.6 Tm), the deformation of a perfect Σ=9(122) symmetrical grain boundary (GB) induced large changes in the initial structure. The structural unit model was used to describe the structure of elementaryΣ=9 DSC dislocations cores, produced at low strain, and higher tilt angle coincidence GB's, produced at large strain . It was shown that the prediction of the GB structural evolution was not so straightforward and that the mixing of structural units depended on the deformation conditions

HREM CHARACTERIZATION OF STRUCTURAL CHANGES IN A DEFORMED Σ = 9 (122) GRAIN BOUNDARY IN SILICON