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The origin of recombination centres at grain boundaries (G. B. ' S) ++9 and Y13 in "CZ" grown bicrystals, doped with 1015 cm-3 boron atoms, has been investigated. L.B.I.C. scan maps at λ = 940 nm and global capacitive measurements (C-V plots, DLTS) applied to the space charge region of G.B.'s, have been used. The first technic allows the local determination of interfacial recombination velocity S, while the second one leads to average values of energy ET, density NT and cross section σT of recombination centres of G.B.'s. Doping atoms profiles can also be obtained within G.B.'s

EXTRINSIC ORIGINE OF RECOMBINATION CENTRES AT GRAIN BOUNDARIES IN P TYPE SILICON BICRYSTALS