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An alternative description is proposed of typical experiments that are performed with the electron beam induced current (EBIC) technique of the scanning electron microscope, on the basis of the notion of charge-collection probability. It is shown that the distribution φ (r) of this probability in the specimen obeys a homogeneous diffusion equation, and the induced current results from probing this sample property with the generation function of the electron beam. EBIC experiments aim at determining the essential semiconductor or defect parameters upon which φ is dependent. Different methods of recovering this information are discussed and some new possibilities are presented

MODELING THE EBIC MEASUREMENTS OF DIFFUSION LENGTHS AND THE RECOMBINATION CONTRAST AT EXTENDED DEFECTS