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The effects of field emission and field-induced defect creation in MIS structures with modified insulator layers were investigated. It was found that in this case the processes involved possessed a number of specifie features. The experimental data permit one to calculate the parameters of field emission for modified and graded insulator structures. New effects of fast and slow surface state created at the Si-SiO2 interface caused by positive bias were observed. A model based on field emission of protons is proposed

FIELD-INDUCED IONIZATION AND EMISSION OF ELECTRONS AND IONS IN MIS STRUCTURES