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Dislocation mobility in Silicon single crystals was studied by isothermal internal friction measurements. In prestrained single crystals three relaxation peaks, superimposed onto a low frequency background, were observed. The first peak corresponds to the migration of geometrical kinks which leads to a rather high migration energy Wm of 1.5 eV. The second one corresponds to a complex mechanism involvig nucleation and migration of interacting kinks on straight dislocation segments. From the measured activation energy (Wm + 1/2 FDK = 1.95 eV), we obtain a kink formation energy of 0.9 eV, lower than tne migration energy. The third peak corresponds to the activation and the migration of non interacting kinks, on segments containing weak obstacles, identified as boron atoms in doped specimens. The activation energy (2.4 eV) corresponds to the sum of the migration and nucleation energies. As regards the low frequency background, it is attributed to the supplementary glide induced by kink absorption at triple nodes

INTERNAL FRICTION STUDY OF THE HIGH TEMPERATURE DISLOCATION MOBILITY IN Si SINGLE CRYSTALS