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A GaAlAs/GaAs multiple quantum well structure exhibiting a thickness gradient over the wafer surface has been analyzed using spectroscopic ellipsometry, electroreflectance and photoreflectance. Due to the sample non uniformity, we have been able to observe the continuous transition from multiple quantum well regime to superlattice regime

le journal de physique colloques

ASSESSMENT OF A MULTIPLE QUANTUM WELL AND A SUPERLATTICE STRUCTURE BY SPECTROSCOPIC ELLIPSOMETRY, ELECTROREFLECTANCE AND PHOTOREFLECTANCE MODULATION SPECTROSCOPY