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In the study of point defects in insulating crystals, it is shown that more information about defect kinetics is obtainable by combining measurements of dielectric relaxation with those of anelastic relaxation than from anelasticity alone. This is true because the two types of experiments usually excite different relaxational modes. Examples of such studies are given, including : quartz crystals with Al-Na defects, ceria with YV0 defects (where V0 is an oxygen-ion vacancy), and ceria with isolated Sc3+ ions, which go into an off-center configuration

THE COMBINING OF DIELECTRIC AND ANELASTIC RELAXATION MEASUREMENTS IN THE STUDY OF POINT DEFECTS IN INSULATING CRYSTALS