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The growth kinetics of molybdenum silicide MoSi2 by cw scanned laser annealing of molybdenum films deposited on amorphous and polycrystalline silicon are studied. Silicide formation kinetics exhibits time dependence behaviour of interface controlled reaction in some cases and diffusion controlled reaction in others. Silicide formation with amorphous silicon occurs quite easily. Growth rates of silicide from metal reaction with monocrystalline and amorphous silicon are compared

REACTION KINETICS OF MoSi2 SILICIDE OBTAINED BY cw LASER ANNEALING OF Si (a) AND Sipoly/Mo BILAYERS

REACTION KINETICS OF MoSi₂ SILICIDE OBTAINED BY cw LASER ANNEALING OF Si (a) AND Si_poly/Mo BILAYERS