English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Defects associated to pulsed electron beam annealing of P implanted Si solar cells lead to poor Voc (< 500 mV). Their nature is discussed on the basic of S.E.M. observations, D.L.T.S. study and degradation of electrical characteristics of Schottky barriers. An improved PEBA process is determined, characterized by a low mean energy electron beam (10 keV) associated to a starting temperature of 450°C and low fluences (≤ J/cm2). Values of Voc similar to conventional thermal annealing are obtained

EFFECT OF HEATING SAMPLES DURING PULSED ELECTRON BEAM ANNEALING ON THE OPEN-CIRCUIT VOLTAGE OF SILICON SOLAR CELLS