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Electron paramagnetic resonance of the defects induced by laser annealing at high power density (2 J/cm-2) has been investigated in virgin FZ semi-insulating Silicon. A further H2+ implantation and diffusion is inactive on the signal observed at gx = 2.0055 ± 0.0005. This is consistent with the attribution of X to the dangling bonds, created by the mechanical stresses during the thermal shock, as they are not passivated by molecular hydrogen

le journal de physique colloques

ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H<sub>2</sub><sup>+</sup> IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON

ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H2+ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON

ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H₂⁺ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON