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The influence of dimeric (As2) vs tetrameric (As4) arsenic vapour species on the electrical and optical properties of undoped and of Ge-doped GaAs grown by molecular beam epitaxy (MBE) has been studied by using Hall effect, photoluminescence (PL) and DLTS measurements. The arsenic molecular beam was obtained from separate As2 and As4 sources, resp., and from a single source providing adjustable As4/As2 flux ratios. The occurrence of the defect related bound exciton lines in the 2K PL spectra was found to be directly correlated with-the existence of three deep states (M1, M3, M4) which are characteristic of MBE grown GaAs. The intensity of these extra PL lines and simultaneously the electron trap concentration could be reduced substantially by decreasing the As4, vs As2 flux ratio. In addition, a considerably lower autocompensation ratio in Ge-doped n-GaAs was achieved with As2 molecular beam species which provide a much higher steady-state arsenic surface population. These results demonstrate that the incorporation of defect related centers as well as of amphoteric dopants strongly depends on the surface chemistry involved in the film growth process

INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE GROWN GaAs