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We report Raman studies of disorder induced scattering in the Ga1-xAlxAs and Ga1-xInxAs alloys. Previous results [1] are confirmed for the Ga1-xAlxAs system for a wider range of concentration. The role of the substituant is discussed through the analysis of the Ga1-xInxAs system

LOW FREQUENCY RAMAN SCATTERING IN MIXED Ga1-xAlxAs AND Ga1-xInxAs ALLOYS

LOW FREQUENCY RAMAN SCATTERING IN MIXED Ga_1-xAl_xAs AND Ga_1-xIn_xAs ALLOYS