Open AccessQuality of Fe3O4 Films Prepared by Plasma Assisted MOCVD
Author(s) -
T. Kiyomura,
M. Gomi
Publication year - 1997
Publication title -
journal de physique iv (proceedings)
Language(s) - English
Resource type - Journals
eISSN - 1764-7177
pISSN - 1155-4339
DOI - 10.1051/jp4:19971253
Subject(s) - metalorganic vapour phase epitaxy , substrate (aquarium) , plasma , diffusion , materials science , chemical vapor deposition , molecule , carbon fibers , analytical chemistry (journal) , thin film , deposition (geology) , oxide , chemical engineering , chemistry , inorganic chemistry , nanotechnology , layer (electronics) , epitaxy , metallurgy , organic chemistry , composite material , biology , paleontology , engineering , thermodynamics , geology , physics , oceanography , sediment , composite number , quantum mechanics
Fe3O4 films have been grown on Si substrates by plasma-assisted MOCVD using acetylacetonate iron complex as a gas source. Relationship between the deposition rate of the film and substrate temperature indicated a possibility that part of the source molecules may be decomposed into iron-oxide molecule and an intermediate by plasma applied in a diffusion process to the substrate surface. These reaction species allowed growth of Fe3O4 films with low carbon contamination and good surface morphology at low temperature of 400°C
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom