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A novel imaging technique for semiconductor samples, the photomodulated microwave absorption (PMA), is presented. The sample is placed in a microwave cavity and illuminated with a modulated focussed laser beam. The excited photo carriers disturb the distribution of the high-frequency electric field in the cavity and therefore change its quality factor. This change is accessible to the experiment. First results on a silicon sample with well defined boron doped areas (1015 cm-2) are resented and compared to Mirage experiments

Spatially resolved photomodulated microwave absorption and thermal wave images of boron doped silicon