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The experiments have been carried out in a vertical impinging jet type reactor in order to have a kinetically controlled growth. Two types of heating modes were used : hot wall reactor (HWR) and cold wall reactor (CWR). The gas phase compositions have been determined by coupling the reactor to a quadrupole mass spectrometer (QMS), while the growth rates were measured versus temperature and phosphine to disilane molar ratio in order to determine the species responsible for the deposits. Disilane draws a decrease in the inhibition of the growth rate which is 4 times less than in the case of monosilane as starting product. In contrast, phosphorus incorporation, which is in the range 1,5.1019-8.1020 atom cm-3, keeps the same order of magnitude

Mass spectrometry study of the gas phase reactions in the CVD of Si and in situ-phosphorus doped Si in order to explain the different growth rates