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The adherence of metallic multilayers in III-V compound devices (W-Mo-Ge deposited on Ga As substrate) has been studied by different characterization techniques : infrared imaging, scanning electron microscopy and localized X ray analysis. The observations realized using infrared emission permit to identify the blistering effect of the deposited layers. The thermal images are in good agreement with topographic images realized by scanning electron microscopy. Moreover the localized X ray analysis of the blisters indicate that the adherence defect concerns the initial Ge/GaAs interface. Infrared emission imaging appears as a non destructive method which may be a useful tool for this kind of problem

CHARACTERIZATION OF MULTILAYERS ADHERENCE ON GaAs SUBSTRATE BY INFRARED IMAGING AND CORRELATION TO ASSOCIATED MICROSCOPY STUDIES