Open AccessLUMINESCENCE CHARACTERIZATION OF GaAs SINGLE QUANTUM WELLS
Author(s) -
R. Mitdank,
H. Haefner,
Elke Schulze,
G. Oelgart
Publication year - 1991
Publication title -
journal de physique iv (proceedings)
Language(s) - English
Resource type - Journals
eISSN - 1764-7177
pISSN - 1155-4339
DOI - 10.1051/jp4:1991623
Subject(s) - characterization (materials science) , quantum well , luminescence , materials science , optoelectronics , nanotechnology , physics , optics , laser
The peculiarities of the photo- and cathodoluminescence of MOVPE grown single quantum wells containing impurities are investigated. The investigations reveal monolayerfluctuations with a lateral extension of about 10 µm. The incorporation of carbon in the thicker islands is shown using micrographs of spectrally resolved cathodoluminescence. Extrinsic radiative transitions involving the impurities are found also in the barrier above that islands which contain impurities. These inhomogenities are proposed to be connected with dislocations emanating from the substrate and penetrating the sandwiched layer structure
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