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The recombination properties of minority carriers have been determined from EBIC and CL measurements versus the primary electron beam energy on step cooling LPE grown n-type GaAs : Sn [MATH] in the temperature range [MATH]. Based on the lifetime and internal quantum yield analysis as a function of the electron concentration we determined the radiative recombination coefficient to B- 5*10-11 cm3s-1 and the internal quantum yield increases from 3% (n0=3*1016cm-3) to 30% (n0=8*1017cm-3) at room temperature. The increase in external luminescence strength versus diminished temperature is caused by the lowered self-absorption and by the rising internal quantum efficiency. Based on the diffusion length and internal quantum yield analysis vs the temperature, the non-radiative recombination due to the deep Sn-acceptor was shown on strongly doped samples [MATH] in the range [MATH]

INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL