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Silicon carbide (SiC) films were synthesized by the low pressure chemical vapor deposition (LPCVD) method, using Si2H6 and C2H2 as reactant gases at 873 K in a horizontal tubular reactor. Kinetic studies using gas chromatography were used to understand the gas-phase and surface chemistry of Si2H6 in the presence of C2H2. The results showed that the direct reaction of Si2H6 on substrate surface was strongly retarded by C2H2 and that the film formation species was either SiH2 or a gas-phase intermediate derived from Si2H6 and C2H2, having a sticking probability of 0.1

journal de physique iv (proceedings)

GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6 AND C2H2 AT 873 K