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The LPCVD of silicon oxynitride has been characterized and optimized using the Design of Experiments method. The data of a half factorial matrix were converted with multiple linear regression analysis into an adequate empirical model : it appeared to be possible to predict the process output parameters (e.g. deposition rate), when applying more or less random input parameters (e.g. process pressure). The method supplies a tool to optimize a process in an efficient way : the optimum settings, found for the silicon oxynitride process are : temperature 800°C, ramp ±8°C, pressure 400 mTorr, DCS flow 70 sccm, (N2O + NH3) / DCS = 3, NH3 / N2O= 0.18. Corresponding predicted output parameters are : deposition rate 14.2 Å/min., uniformity over the wafer ±2 % and the uniformity over the boat 0 %. The refractive index becomes 1.70 ± 0.01

CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD