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A key process in thin film silicon-based solar cell manufacturing is plasma enhancedchemical vapor deposition (PECVD) of the active layers. The deposition process can bemonitored in situ by plasma diagnostics. Three types of complementary diagnostics, namelyoptical emission spectroscopy, mass spectrometry and non-linear extended electron dynamicsare applied to an industrial-type PECVD reactor. We investigated the influence ofsubstrate and chamber wall temperature and chamber history on the PECVD process. Theimpact of chamber wall conditioning on the solar cell performance is demonstrated

Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing