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In this study optical transmission measurements were performed in-situ during the growth  of microcrystalline silicon (μc-Si:H) layers by plasma enhanced chemical  vapor deposition (PECVD). The stable plasma emission was used as light source. The  effective absorption coefficient of the thin μc-Si:H layers which were  deposited on rough transparent conductive oxide (TCO) surfaces was calculated from the  transient transmission signal. It was observed that by increasing the surface roughness of  the TCO, the effective absorption coefficient increases which can be correlated to the  increased light scattering effect and thus the enhanced light paths inside the silicon. A  correlation between the in-situ determined effective absorbance of the  μc-Si:H absorber layer and the short-circuit current density of  μc-Si:H thin-film silicon solar cells was found. Hence, an attractive  technique is demonstrated to study, on the one hand, the absorbance and the light trapping  in thin films depending on the roughness of the substrate and, on the other hand, to  estimate the short-circuit current density of thin-film solar cells in-situ, which makes  the method interesting as a process control tool

In-situ determination of the effective absorbance of thinμc-Si:H layers growing on rough ZnO:Al