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We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H 3 PO 4  and 24% H 2 SO 4  accelerated the etching process significantly to an etching parameter  D  of 11.2 μm 2 /s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.

Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG