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Extreme ultraviolet (EUV) lithography is key technology for further decrease of integral circuit (IC) scales [1]. Transition to smaller wavelength of exposing radiation requires generation of plasma with multiply charged ions of heavy elements emitting EUV light. Now IC manufacturers use sources based on laser evaporation of tin droplets that can provide 200–250 W of EUV light in 13.5 nm ±1% spectral band [2–4]. However experts believe that for significant improvement of IC form factor about 1 kW power is required that can hardly be obtained in laser produced plasmas [4]. A competitive alternative is microwave discharge supported by submillimeter wave radiation of modern high power gyrotrons. Duration of gyrotron pulses is much longer (50 μs to CW) and provided power is much higher (up to 1 MW) than those for lasers in use. These allow to support strongly radiating discharge in stationary mode. Moreover, microwave heating leads to nonequilibrium plasma with highenergy electrons and as a consequence high rates of electron impact ionization and excitation. Two concepts of such EUV light sources were developed in IAP: based on tin plasma flow propagating through the open magnetic trap and freely expanding flow of xenon plasma [5, 6]. Both concepts are tested in proof of principle experiments, but detailed theoretical study is required to explore physical constrains and prospects for these concepts. This study is in focus of present communication.

Modelling of EUV light sources based on microwave discharge in inhomogeneous flow of nonequilibrium plasma with multiply charged tin and xenon ions