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Heterodyne polarimetry is based on the analysis of phases and polarization states  of two frequency shifted cross-polarized waves, generated by Zeeman lasers and  their analogs [1]. In semiconductor industry, manufacturing of memory chips  depends on the width and aspect ratio of a great number of identical parallel  vertical and horizontal word and bit address lines. Such a structure may be  considered as a wire grid polarizer for visible optics, and it is reasonable to  expect that polarimetry techniques may be efficient for detecting tiny  variations in this type of structures on masks and wafers. Currently, both  imaging and non-imaging modalities are considered as complementary inspection  technologies. The talk will focus on instrumentation, theory, and experimental  results of two different inspection tools: scanning polarimeters for mapping  variations of critical dimensions over lithography masks and semiconductor  wafers, and polarization-controlled dual-channel heterodyne microscope with  super-resolution capabilities

Heterodyne polarimetry technology for inspection of critical dimensions