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This work presents an analytic angular differential cross section formula forthe electromagnetic radiation field assisted electron scattering by %% was onimpurities in semiconductors. These impurities are approximated with variousmodel potentials. The scattered electrons are described by the well-knownVolkov wave function, which has been used describe strong laser field matterinteraction for more than half a century, %% I would remove this time referencefor clarity which exactly describes the interaction of the electron with theexternal oscillating field. These calculations show that the electronconductance in a semiconductor could be enhanced by an order of magnitude if aninfrared electromagnetic field is present with $ 10^{11} < I < 10^{13}$W/cm$^2$ intensity.

The influence of a strong infrared radiation field on the conductance properties of doped semiconductors