English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

International audienceWe report the growth of indium-rich InGaN alloys by metal-organic vapour phase epitaxy, using ammonia, trimethylgallium and trimethylindium as precursors. Compared to indium nitride, our alloy samples present substantial photoluminescence robustness with temperature. The analysis of the optical properties of these samples versus temperature indicates the existence of two non radiative recombination channels: one with a thermal activation temperature of 77 K and another one with an activation temperature ranging from 300 K for InN up to 640 K for InGaN. The latter competes with the former at low temperatures whilst the former rules the optical properties at ambient conditions

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties