English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.

The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)