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We have developed a new VUV (100 < λ < 200 nm) photo-enhanced chemical vapor deposition (Photo-CVD) technique, using an internal hydrogen discharge lamp. By this way the need for a window between the incident excitation light and reactant gas (SiH 4 , Si 2 H 6 , O 2 , N 2 O, N 2 , NH 3 ), is eliminated thus overcoming the problems of attenuation of short wavelength radiation by the window for two reasons: a limited transparency of the available optical materials in the VUV range and a progressive window opacification by film deposition during the process. Possibilities given by this reactor, for depositing large area hydrogenated amorphous silicon and silicon nitride are demonstrated

Réacteur VUV à décharge interne pour le dépôt en couches minces de silicium amorphe, d'oxyde et de nitrure de silicium