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Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. At low voltage, a 78% slope efficiency, and a 350 mu A threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2 mA drive current. The device operates in a single mode up to 1.5 mW. >

Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency