Open AccessNovel In0.41Ga0.59As/In0.53Ga0.47As strained emitter heterojunction bipolar transistor grown by molecular beam epitaxy
Author(s) -
Chibing Huang,
HaoHsiung Lin
Publication year - 1992
Publication title -
electronics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el:19920659
Subject(s) - molecular beam epitaxy , common emitter , heterojunction , bipolar junction transistor , materials science , optoelectronics , heterostructure emitter bipolar transistor , input offset voltage , heterojunction bipolar transistor , gallium arsenide , transistor , substrate (aquarium) , layer (electronics) , epitaxy , voltage , electrical engineering , nanotechnology , amplifier , oceanography , engineering , operational amplifier , cmos , geology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom