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The first-principles calculations predict a stable biphenylene carbon network(BPN) like the Boron-nitride structure named inorganic biphenylene network(I-BPN). A comparison has been done between BPN and I-BPN to examine thestability of the I-BPN monolayer. We calculate the formation energy, phonondispersion and mechanical parameters: young modulus and Poisson ratio formechanical stability. It has been found that the stability of I-BPN iscomparable with the BPN. The lattice transport properties reveal that thephonon thermal conductivity of I-BPN is 10th order low than the BPN. Theelectronic band structure reveals that I-BPN is a semiconductor with anindirect bandgap of 1.88 eV with valence band maximum (VBM) at Y and conductionband maximum (CBM) at the X high symmetry point. In addition, thethermoelectric parameters, such as the seebeck coefficient, show the highestpeak value of 0.00292 V/K at 324K. Electronic transport properties reveal thatI-BPN is highly anisotropic along the x and y-axes. Furthermore, thethermoelectric power factor as a function of chemical potential shows a peakvalue of 0.0056 W/mK2 (900K) along the x-axis in the p-type doping region. Anelectronic figure of merit shows an amplified peak approach to 1. The totalfigure of merit (including lattice transport parameters) shows peak values of0.378 (0.21) for p-type and 0.24 (0.198) n-type regions along the x(y)direction. It is notice that the obtain ZT peaks values are higher than any B-Ncompositions.

Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride