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Charge trapping is energetically favourable for electronic states in the band gap of glassy phase-change memory materials. Intrinsic near-linear triatomic environments in defective-octahedral configurations can capture extra electrons and holes.

Inherent electron and hole trapping in amorphous phase-change memory materials: Ge2Sb2Te5

Inherent electron and hole trapping in amorphous phase-change memory materials: Ge₂Sb₂Te₅