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The promising photoelectric semiconductor 2H SnGe 2 N 4  has a tunable electronic structure which is favorable for the absorption of light in the infrared and visible regions.

Layered post-transition-metal dichalcogenide SnGe2N4 as a promising photoelectric material: a DFT study

Layered post-transition-metal dichalcogenide SnGe₂N₄ as a promising photoelectric material: a DFT study